NVD5863NLT4G
Manufacturer:
On Semiconductor
Mfr.Part #:
NVD5863NLT4G
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel 3.1 W 60 V Continuous Drain Current (ID):82 A 70 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 3.1 W |
| Input capacitance | 3.85 nF |
| Continuous Drain Current (ID) | 82 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 70 nC |
| Drain to Source Resistance | 7.1 mΩ |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
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